2D is expected to exceed graphene and silicon materials-Iota

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News > Dynamic industry > 2D is expected to exceed graphene and silicon materials

2D is expected to exceed graphene and silicon materials

International semiconductor technology roadmap (ITRS) continued to look for the action of silicon replacement materials has attracted worldwide attention, the industry is expected to find a kind of 2D can achieve ultra high speed of the ideal conductive material. Graphene and its derivative version of the carbon nano tube (CNT) has been the most promising and popular technology, but black phosphorus in photonics applications also has shown performance is better than that of graphene.
Recently, researchers at Keele University in Canada (McGillUniversity) and the University of Montreal (UniversitedeMontreal) have claimed that the 2D single layer of black phosphorus - phosphorus (phosphorene), which can show a better than Shi Moxi and pure electronic circuit.
Advantages of 2D conductive material is at room temperature to achieve reaching superconducting speed, and are very suitable for the extension of the itrs development blueprint -- will be needed in the future atomic monolayer continuation of Moore's Law (Moore 'sLaw) progress. Regret is any material atomic monolayer is very fragile, and must be found to depositing multilayer and conductive material in the form of a 2D.
The model of black phosphorus in the graph shows that the structure of the "folding honeycomb" of the atomic layer of the atomic layer is described.
The model of black phosphorus in the graph shows that the structure of the "folding honeycomb" of the atomic layer of the atomic layer is described.
The model of black phosphorus in the graph shows that the structure of the "folding honeycomb" of the atomic layer of the atomic layer is described.
(source: McGillUniversity)
"Our study shows that we can induce electrons to move in multiple 2D forms of black phosphorus atoms," Professor ThomasSzkopek explained. "On purely scientific grounds, we still don't know how electrons move in a limited 2D, but in terms of technology, it is because the electronic components are better known as the electrons are confined to 2D."
At room temperature, the electron transfer rate of phosphorus was 2 times higher than that of 2700cm2 (/Vs), while the cooling time (3900cm2/Vs) was 3 times higher than that of the substrate. The drawback is that the black phosphorus single layer has been shown to be unstable, unless it can be isolated from the normal atmospheric environment. However, researchers at the Keele University believe that this is not a serious problem, because they have found that the 2D electrons move in the black phosphorus or even penetrate the multilayer conductive material.
"We all know that the stability of the black phosphorus is insufficient, unless the environmental protection measures are taken. Moreover, the thinner the black phosphorus layer, the more unstable." Szkopek pointed out, "but according to our observations, it is not required to see the electronic movement of the 2D, which is important for the development of the future development of black phosphorus components."
To prove this point of view, the researchers will be black phosphorus manufacturing into quantum well field effect transistor (FET) bare crystal, it can to more than 100000 current setting value easily, the conduction and disconnection. Even though the material is made of multiple layers, the researchers can use the magnetic transport measurements to show the 2D carrier. In addition, the researchers also predict that this kind of FET can be very low voltage operation, low power operation.
Keele University and University of Montreal researchers to create a quantum well field effect transistor bare crystal
Keele University and University of Montreal researchers to create a quantum well field effect transistor bare crystal
Keele University and University of Montreal researchers to create a quantum well field effect transistor bare crystal
(source: McGillUniversity)
In the future, the researchers will be the best of the phosphorus layer and the best medium to carry out experiments, the expected to produce FET and the best metal contact. In addition to the optimization, the researchers were planning to study how to make this material in a large scale in a wafer factory.
Keele University professor GuillaumeGervais, University of Montreal, Professor RichardMartel also participated in this research. The study was conducted at the national high magnetic field laboratory in Florida, supported by the National Science Foundation (NSF), Florida and the U.S. Department of energy (DoE).

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